English
简体中文
MOSFET N-CH 55V 200A 10POWERSO
TERMINAL BLOCK, SCREWLESS, 3.50,
IC ADC/DAC 10BIT 225K 36TQFN
DIODE ZENER
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | STripFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 200A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2.5mOhm @ 75A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 100 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6800 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 10-PowerSO |
| 包/箱: | PowerSO-10 Exposed Bottom Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PSMN2R0-25YLDXNexperia |
MOSFET N-CH 25V 100A LFPAK56 |
|
SPI07N60C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TPH3300CNH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 150V 18A 8SOP |
|
PCP1405-TD-HSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 600MA SOT89 |
|
DMT6004SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 100A TO220-3 |
|
NP82N04MUG-S18-AYRochester Electronics |
MOSFET N-CH 40V 82A TO220-3 |
|
AUIRLR2905Rochester Electronics |
MOSFET N-CH 55V 42A DPAK |
|
APT1001RSVRGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 11A D3PAK |
|
AUIRFS4310TRLRochester Electronics |
MOSFET N-CH 100V 75A D2PAK |
|
IXFH23N80QWickmann / Littelfuse |
MOSFET N-CH 800V 23A TO247AD |
|
SIHB24N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 21A D2PAK |
|
2SJ654Rochester Electronics |
P-CHANNL SILICON MOSFET |
|
FQP2N50Rochester Electronics |
MOSFET N-CH 500V 2.1A TO220-3 |