English
简体中文
MEMS OSC XO 66.6666MHZ H/LV-CMOS
MEMS OSC XO 150.0000MHZ LVCMOS
SMALL SIGNAL FIELD-EFFECT TRANSI
BOX FIBERGLASS GRY 14.5"X12.72"
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 75 V |
| 电流 - 连续漏极 (id) @ 25°c: | 300mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 4Ohm @ 500mA, 4.5V |
| vgs(th) (最大值) @ id: | 1.3V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 1 nC @ 8 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 40 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 700mW (Tc) |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-323 |
| 包/箱: | SC-70, SOT-323 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK7506-75B,127Rochester Electronics |
PFET, 75A I(D), 75V, 0.0056OHM, |
|
AOTF600A70FLAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 8.5A TO220F |
|
RZR020P01TLROHM Semiconductor |
MOSFET P-CH 12V 2A TSMT3 |
|
FDMS0310SRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
FQI10N20CTURochester Electronics |
MOSFET N-CH 200V 9.5A I2PAK |
|
BUK6240-75C,118Rochester Electronics |
MOSFET N-CH 75V 22A DPAK |
|
SSM3J36TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 330MA UFM |
|
IRFH8303TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 43A/100A 8PQFN |
|
IPD60R520CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDD2670Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 3.6A TO252 |
|
ZXMP10A17GQTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 100V 2.4A SOT223 |
|
IPB180N04S4LH0ATMA1Rochester Electronics |
MOSFET N-CH 40V 180A TO263-7-3 |
|
RSR020P05FRATLROHM Semiconductor |
MOSFET P-CH 45V 2A TSMT3 |