English
简体中文
MOSFET P-CH 20V 15A 8SO
CAP 1F 20% 2.3V T/H
MOSFET N-CH 150V 18A TO252AA
CONN PC PIN SQUARE 0.025 TINLEAD
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 15A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 8.2mOhm @ 15A, 4.5V |
| vgs(th) (最大值) @ id: | 1.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 130 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 7980 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STD18N55M5STMicroelectronics |
MOSFET N-CH 550V 16A DPAK |
|
DMG3401LSN-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 3A SC59 |
|
FDMC8878Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9.6A/16.5A 8MLP |
|
BUK7660-100A,118Nexperia |
MOSFET N-CH 100V 26A D2PAK |
|
2SK2045LSRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
FDS7760ARochester Electronics |
MOSFET N-CH 30V 15A 8SOIC |
|
IRL80HS120IR (Infineon Technologies) |
MOSFET N-CH 80V 12.5A 6PQFN |
|
DMP6050SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 5.7A PWRDI5060-8 |
|
SPA11N80C3XKSA2IR (Infineon Technologies) |
MOSFET N-CH 800V 11A TO220-3 |
|
TK5Q60W,S1VQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 5.4A IPAK |
|
FQA28N50-ONRochester Electronics |
28.4A, 500V, 0.16OHM, N-CHANNEL |
|
IRFR420APBFVishay / Siliconix |
MOSFET N-CH 500V 3.3A DPAK |
|
IXFT86N30TWickmann / Littelfuse |
MOSFET N-CH 300V 86A TO268 |