English
简体中文
PFET, 80A I(D), 40V, 0.0067OHM,
TERM BLK 21P SIDE ENTRY 5MM PCB
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, OptiMOS™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 6.7mOhm @ 80A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 150µA |
| 栅极电荷 (qg) (max) @ vgs: | 104 nC @ 10 V |
| vgs (最大值): | +5V, -16V |
| 输入电容 (ciss) (max) @ vds: | 6.58 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 88W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220-3-1 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPA50R299CPXKSA1Rochester Electronics |
MOSFET N-CH 550V 12A TO220-FP |
|
SUD19N20-90-E3Vishay / Siliconix |
MOSFET N-CH 200V 19A TO252 |
|
IRFBC30ASTRLPBFVishay / Siliconix |
MOSFET N-CH 600V 3.6A D2PAK |
|
YJL02N10A-F2-0000HF |
N-CH MOSFET 100V 2A SOT-23-3L |
|
IXTF02N450Wickmann / Littelfuse |
MOSFET N-CH 4500V 200MA I4PAC |
|
UF3SC120016K3SUnitedSiC |
SICFET N-CH 1200V 107A TO247-3 |
|
PSMN1R9-40YSDXNexperia |
MOSFET N-CH 40V 200A LFPAK56 |
|
RF4E070GNTRROHM Semiconductor |
MOSFET N-CH 30V 7A HUML2020L8 |
|
STD4NK60Z-1STMicroelectronics |
MOSFET N-CH 600V 4A IPAK |
|
IRLR024TRLVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
R6007JND3TL1ROHM Semiconductor |
MOSFET N-CH 600V 7A TO252 |
|
AOW7S65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 7A TO262 |
|
BSP373L6327Rochester Electronics |
N-CHANNEL POWER MOSFET |