English
简体中文
MOSFET N-CHANNEL 600V 20A TO220
POT CERMET ELEMENT
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ M2 |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 169W (Tc) |
| 工作温度: | - |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFR430BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDP86363_F085Rochester Electronics |
110A, 80V, 0.0028OHM, N-CHANNEL |
|
SSM6K411TU(TE85L,FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 10A UF6 |
|
APT50N60JCCU2Roving Networks / Microchip Technology |
MOSFET N-CH 600V 50A SOT227 |
|
TPIC2322LDRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
STB9NK50ZT4STMicroelectronics |
MOSFET N-CH 500V 7.2A D2PAK |
|
STP5N60M2STMicroelectronics |
MOSFET N-CH 600V 3.7A TO220 |
|
TSM650N15CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 150V 24A 8PDFN |
|
IXFK88N30PWickmann / Littelfuse |
MOSFET N-CH 300V 88A TO264AA |
|
IRFSL7430PBFRochester Electronics |
MOSFET N-CH 40V 195A D2PAK |
|
NTP7D3N15MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 12.1/101A TO220 |
|
FDB24AN06LA0Rochester Electronics |
MOSFET N-CH 60V 7.8A/40A TO263AB |
|
CSD19531Q5ATexas Instruments |
MOSFET N-CH 100V 100A 8VSON |