English
简体中文
CRYSTAL 24.5760MHZ 10PF SMD
MOSFET N-CH 40V 74A PPAK SO-8
INSULATION DISPLACEMENT TERMINAL
28W74BLK W/25' #12-4BLK SO CORD
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 74A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 5.8mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 35 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1780 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 75W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STI24N60M6STMicroelectronics |
MOSFET N-CH 600V I2PAK |
|
DMN3008SFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V PWRDI3333 |
|
FDS8449-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 7.6A 8SOIC |
|
IRF840SPBFVishay / Siliconix |
MOSFET N-CH 500V 8A D2PAK |
|
PMN30UN115Rochester Electronics |
N-CHANNEL, MOSFET |
|
FQAF19N20Rochester Electronics |
MOSFET N-CH 200V 15A TO3PF |
|
IXTA4N80PWickmann / Littelfuse |
MOSFET N-CH 800V 3.6A TO263 |
|
AO7413Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 1.4A SC70-3 |
|
IXTP4N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 4A TO220 |
|
FDZ493PRochester Electronics |
MOSFET P-CH 20V 4.6A 9BGA |
|
FK8V03030LPanasonic |
MOSFET N CH 33V 12A WMINI8 |
|
BUK7523-75A,127Rochester Electronics |
MOSFET N-CH 75V 53A TO220AB |
|
FDZ193PRochester Electronics |
MOSFET P-CH 20V 3A 6WLCSP |