English
简体中文
XTAL OSC VCXO 163.8400MHZ LVDS
XTAL OSC XO 200.000MHZ LVDS SMD
MOSFET N-CH 20V 3.5A TUMT6
RECTIFIER DIODE, 0.2A, 100V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 43mOhm @ 3.5A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 5.7 nC @ 4.5 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 460 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 320mW (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TUMT6 |
| 包/箱: | 6-SMD, Flat Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIR164DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8 |
|
FDN86265PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 800MA SUPERSOT3 |
|
IPB60R099C7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 22A TO263-3 |
|
IPU50R2K0CEAKMA1Rochester Electronics |
MOSFET N-CH 500V 2.4A TO251-3 |
|
DMTH6005LK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 90A TO252-4L |
|
SI1442DH-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 4A SC70-6 |
|
BS870-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 250MA SOT23-3 |
|
STD100N10F7STMicroelectronics |
MOSFET N CH 100V 80A DPAK |
|
NVTFS5C658NLWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 109A 8WDFN |
|
SI7852DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 7.6A PPAK SO-8 |
|
CSD17579Q5ATTexas Instruments |
MOSFET N-CH 30V 25A 8VSON |
|
IRFR4620PBFRochester Electronics |
PFET, 24A I(D), 200V, 0.078OHM, |
|
PSMN1R2-30YLC,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |