| 类型 | 描述 |
|---|---|
| 系列: | Polar™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.4A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 13Ohm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 24.8 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 666 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 86W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
DMT10H025SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 7.4A 8SO |
|
|
DMP2008UFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 14A PWRDI3333 |
|
|
IPD78CN10NGBUMA1Rochester Electronics |
PFET, 13A I(D), 100V, 0.078OHM, |
|
|
BSC080N03MSGRochester Electronics |
BSC080N03 - 12V-300V N-CHANNEL P |
|
|
PMV280ENEARNexperia |
MOSFET N-CH 100V 1.1A TO236AB |
|
|
SQJ401EP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 12V 32A PPAK SO-8 |
|
|
IRF6215STRRPBFRochester Electronics |
MOSFET P-CH 150V 13A D2PAK |
|
|
TPN4R303NL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 40A 8TSON |
|
|
BUK7Y21-40EXNexperia |
MOSFET N-CH 40V 33A LFPAK56 |
|
|
SSM3K72CFS,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 170MA SSM |
|
|
FQB45N15V2TMRochester Electronics |
MOSFET N-CH 150V 45A D2PAK |
|
|
IXTA20N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 20A TO263 |
|
|
TSM3443CX6 RFGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 20V 4.7A SOT26 |