







MOSFET N-CH 55V 75A D2PAK
CMC 5MH 300MA 2LN TH
8LT 55C 55#20 SKT J/N
CONN RCPT HSNG MALE 41POS INLINE
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 6.5mOhm @ 66A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 110 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3.45 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 170W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
PHP20N06T,127Nexperia |
MOSFET N-CH 55V 20.3A TO220AB |
|
|
SI2319DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 2.3A SOT23-3 |
|
|
TSM038N03PQ33 RGGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 78A 8PDFN |
|
|
SSM6J412TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 4A UF6 |
|
|
BUK7675-55A,118Nexperia |
MOSFET N-CH 55V 20.3A D2PAK |
|
|
IXFP26N30X3Wickmann / Littelfuse |
MOSFET N-CH 300V 26A TO220AB |
|
|
TSM250N02CX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 20V 5.8A SOT23 |
|
|
IXFN40N90PWickmann / Littelfuse |
MOSFET N-CH 900V 33A SOT227B |
|
|
FCH040N65S3-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 65A TO247-3 |
|
|
IPA028N08N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 89A TO220-FP |
|
|
IRLR120PBFVishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
|
RM1002Rectron USA |
MOSFET N-CHANNEL 100V 2A SOT23 |
|
|
PMV16XNRNexperia |
MOSFET N-CH 20V 6.8A TO236AB |