English
简体中文
MOSFET N-CH 250V 50A TO263
CONN HEADER VERT 24POS 2.54MM
DGT ISOL 3500VRMS 5CH GP 22DIP
IC FLASH 1MBIT SPI 66MHZ 8UDFN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 250 V |
| 电流 - 连续漏极 (id) @ 25°c: | 50A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 50mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 78 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 4000 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 400W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263 (IXTA) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFP3415PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 43A TO247AC |
|
IRF9510Rochester Electronics |
MOSFET P-CH 100V 4A TO220AB |
|
STD11NM65NSTMicroelectronics |
MOSFET N CH 650V 11A DPAK |
|
NVA4001NT1GRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
STU8NM50NSTMicroelectronics |
MOSFET N-CH 500V 5A IPAK |
|
DMN62D1LFD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 400MA 3DFN |
|
DMN3065LW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 4A SOT323 |
|
TK17N65W,S1FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 17.3A TO247 |
|
SP000089223Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
IPI80N04S403AKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO262-3 |
|
MTM861280LBFPanasonic |
MOSFET P-CH 20V 1A WSSMINI6-F1 |
|
BUK768R1-40E,118Nexperia |
MOSFET N-CH 40V 75A D2PAK |
|
STD130N6F7STMicroelectronics |
MOSFET N-CHANNEL 60V 80A DPAK |