







 
                            CRYSTAL 27.0000MHZ 16PF SMD
 
                            MEMS OSC XO 7.3728MHZ H/LV-CMOS
 
                            MOSFET N-CH 650V 7A TO252AA
 
                            IC SRAM 36MBIT PARALLEL 165FBGA
| 类型 | 描述 | 
|---|---|
| 系列: | E | 
| 包裹: | Tape & Reel (TR) | 
| 零件状态: | Active | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 650 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 7A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 10V | 
| rds on (max) @ id, vgs: | 600mOhm @ 3A, 10V | 
| vgs(th) (最大值) @ id: | 4V @ 250µA | 
| 栅极电荷 (qg) (max) @ vgs: | 48 nC @ 10 V | 
| vgs (最大值): | ±30V | 
| 输入电容 (ciss) (max) @ vds: | 820 pF @ 100 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 78W (Tc) | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | TO-252AA | 
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | IPB017N10N5LFATMA1IR (Infineon Technologies) | MOSFET N-CH 100V 180A TO263-7 | 
|   | NVMFS6H864NT1GSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 80V 6.7A/21A 5DFN | 
|   | DN3525N8-GRoving Networks / Microchip Technology | MOSFET N-CH 250V 360MA TO243AA | 
|   | NTMS4503NR2GRochester Electronics | MOSFET N-CH 28V 9A 8SOIC | 
|   | FDC365PSanyo Semiconductor/ON Semiconductor | MOSFET P-CH 35V 4.3A SUPERSOT6 | 
|   | IPP65R190C7FKSA1IR (Infineon Technologies) | MOSFET N-CH 650V 13A TO220-3 | 
|   | IXTB30N100LWickmann / Littelfuse | MOSFET N-CH 1000V 30A PLUS264 | 
|   | DMP2033UVT-7Zetex Semiconductors (Diodes Inc.) | MOSFET P-CH 20V 4.2A TSOT-26 | 
|   | FQA35N40Rochester Electronics | MOSFET N-CH 400V 35A TO3P | 
|   | IPP60R190C6XKSA1IR (Infineon Technologies) | MOSFET N-CH 600V 20.2A TO220-3 | 
|   | RRQ030P03HZGTRROHM Semiconductor | MOSFET P-CH 30V 3A TSMT6 | 
|   | SFI9Z24TURochester Electronics | P-CHANNEL POWER MOSFET | 
|   | BUK755R2-40B,127Rochester Electronics | PFET, 75A I(D), 40V, 0.0052OHM, |