English
简体中文
MOSFET N-CHANNEL 100V 32A TO252
DIODE GEN PURP 1KV 75A TO247
.050 X .050 C.L. FEMALE IDC ASSE
COUPLER MODULE, RCA PASS-THROUGH
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 32A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 37mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 34 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1598 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 83.3W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252, (D-Pak) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PSMN9R0-25YLC,115Rochester Electronics |
MOSFET N-CH 25V 46A LFPAK56 |
|
APT5014BLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 35A TO247 |
|
NVB5860NT4GRochester Electronics |
MOSFET N-CH 60V 220A D2PAK-3 |
|
STI260N6F6STMicroelectronics |
MOSFET N-CH 75V 120A I2PAK |
|
DMTH8008SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 80V 92A PWRDI5060-8 |
|
IRF540NSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 33A D2PAK |
|
IRF143Rochester Electronics |
MOSFET N-CH 60V 24A TO3 |
|
NTMS4802NR2GRochester Electronics |
MOSFET N-CH 30V 11.1A 8SOIC |
|
BUK9M120-100EXNexperia |
MOSFET N-CH 100V 11.5A LFPAK33 |
|
SSM6J414TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P CH 20V 6A UF6 |
|
STD5N95K5STMicroelectronics |
MOSFET N-CH 950V 3.5A DPAK |
|
PSMN4R3-40MLHXNexperia |
MOSFET N-CH 40V 95A LFPAK33 |
|
TJ50S06M3L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 50A DPAK |