







CIR BRKR THRM MAG 500MA 480V 65V
MEMS OSC TCXO 625.0000MHZ LVDS
MOSFET P-CH 20V 1.5A TSMT5
XTAL OSC XO 10.0000MHZ CMOS SMD
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.5A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 200mOhm @ 1.5A, 4.5V |
| vgs(th) (最大值) @ id: | 2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 4.2 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 325 pF @ 10 V |
| 场效应管特征: | Schottky Diode (Isolated) |
| 功耗(最大值): | 1.25W (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TSMT5 |
| 包/箱: | SOT-23-5 Thin, TSOT-23-5 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
BSC050N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 18A/80A TDSON |
|
|
IRLR2908PBFRochester Electronics |
HEXFET POWER MOSFET |
|
|
SQ3427EV-T1_BE3Vishay / Siliconix |
MOSFET P-CH 60V 5.3A 6TSOP |
|
|
NTLUS4930NTBGRochester Electronics |
MOSFET N-CH 30V 3.8A 6UDFN |
|
|
STD3NK50ZT4STMicroelectronics |
MOSFET N-CH 500V 2.3A DPAK |
|
|
NTB8N50Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
STP14NF10STMicroelectronics |
MOSFET N-CH 100V 15A TO220AB |
|
|
FDS5672Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 12A 8SOIC |
|
|
AOT414Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 5.6A/43A TO220 |
|
|
FQA90N08Rochester Electronics |
MOSFET N-CH 80V 90A TO3PN |
|
|
IXFN200N10PWickmann / Littelfuse |
MOSFET N-CH 100V 200A SOT-227B |
|
|
TSM35N10CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 100V 32A TO252 |
|
|
PSMN9R0-25YLC,115Rochester Electronics |
MOSFET N-CH 25V 46A LFPAK56 |