| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Tape & Reel (TR)Cut Tape (CT) | 
| 零件状态: | Active | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 30 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 5.7A (Ta) | 
| 驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V | 
| rds on (max) @ id, vgs: | 23mOhm @ 5.7A, 4.5V | 
| vgs(th) (最大值) @ id: | 900mV @ 250µA | 
| 栅极电荷 (qg) (max) @ vgs: | 18.6 nC @ 4.5 V | 
| vgs (最大值): | ±12V | 
| 输入电容 (ciss) (max) @ vds: | 1150 pF @ 15 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 510mW (Ta), 6.94W (Tc) | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | TO-236AB | 
| 包/箱: | TO-236-3, SC-59, SOT-23-3 | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | SI1404BDH-T1-GE3Vishay / Siliconix | MOSFET N-CH 30V 1.9A/2.37A SC70 | 
|   | STD16N60M2STMicroelectronics | MOSFET N-CH 600V 12A DPAK | 
|   | IRFD220Rochester Electronics | 0.8A 200V 0.800 OHM N-CHANNEL | 
|   | TSM70NB1R4CP ROGTSC (Taiwan Semiconductor) | MOSFET N-CHANNEL 700V 3A TO252 | 
|   | FQP16N25CRochester Electronics | MOSFET N-CH 250V 15.6A TO220-3 | 
|   | TK14A65W5,S5XToshiba Electronic Devices and Storage Corporation | MOSFET N-CH 650V 13.7A TO220SIS | 
|   | PN3685Rochester Electronics | MOSFET N-CH TO-92 | 
|   | IPI023NE7N3GRochester Electronics | N-CHANNEL POWER MOSFET | 
|   | RUF025N02FRATLROHM Semiconductor | MOSFET N-CH 20V 2.5A TUMT3 | 
|   | IRLR014TRLPBFVishay / Siliconix | MOSFET N-CH 60V 7.7A DPAK | 
|   | IPW60R075CPFKSA1IR (Infineon Technologies) | MOSFET N-CH 650V 39A TO247-3 | 
|   | PMT200EPEXNexperia | MOSFET P-CH 70V 2.4A SOT223 | 
|   | IRFL4310TRPBFIR (Infineon Technologies) | MOSFET N-CH 100V 1.6A SOT223 |