







MOSFET N-CH 60V 13A/50A 8VSON
PTC RESET FUSE 250V 150MA RADIAL
CONN MOD JACK 8P8C R/A UNSHLD
IC MMIC IMAGE REJECT MXR 6-30GHZ
| 类型 | 描述 |
|---|---|
| 系列: | NexFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 13A (Ta), 50A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
| rds on (max) @ id, vgs: | 9.8mOhm @ 14A, 10V |
| vgs(th) (最大值) @ id: | 2.3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 22 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1770 pF @ 30 V |
| 场效应管特征: | - |
| 功耗(最大值): | 3.1W (Ta), 77W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-VSONP (5x6) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
FQP7P20Rochester Electronics |
MOSFET P-CH 200V 7.3A TO220-3 |
|
|
NTP082N65S3FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 40A TO220-3 |
|
|
SQD50N04-5M6_T4GE3Vishay / Siliconix |
MOSFET N-CH 40V 50A TO252AA |
|
|
BSS806NH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 20V 2.3A SOT23-3 |
|
|
APT5010LVRGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 47A TO264 |
|
|
PMPB15XPZNexperia |
MOSFET P-CH 12V 8.2A DFN2020MD-6 |
|
|
TP65H480G4JSG-TRTransphorm |
GANFET N-CH 650V 3.6A 3PQFN |
|
|
HUF75639P3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 56A TO220-3 |
|
|
FQPF2N30Rochester Electronics |
MOSFET N-CH 300V 1.34A TO220F |
|
|
DMTH6016LPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CHA 60V 10.6A POWERDI |
|
|
NTLGF3501NT2GRochester Electronics |
MOSFET N-CH 20V 2.8A 6DFN |
|
|
FDMC86570LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 18A/56A POWER33 |
|
|
DMTH8012LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 80V 10A PWRDI5060 |