English
简体中文
ERL-20-11 2K 1% T-1 RLR20C2001FS
MOSFET N-CH 30V 50A PPAK SO-8
DIODE ZENER 8.7V DO35
SENSOR TRANSMISSIVE 30MM LIMIT
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® Gen III |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 50A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 2.5mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 123 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3950 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 69W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RM7N600IPRectron USA |
MOSFET N-CHANNEL 600V 7A TO251 |
|
IRFZ24PBFVishay / Siliconix |
MOSFET N-CH 60V 17A TO220AB |
|
SIR640ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 41.6A/100A PPAK |
|
IPLU300N04S4R8XTMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 300A 8HSOF |
|
FDMA86265PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 1A 6MICROFET |
|
HUF76132S3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTGS4141NT1Rochester Electronics |
MOSFET N-CH 30V 3.5A 6TSOP |
|
IRFU4105ZPBF-IRRochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
|
FDS7096N3Rochester Electronics |
MOSFET N-CH 30V 14A 8SOIC |
|
IRF730BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK3984-ZK-E1-AYRochester Electronics |
MOSFET N-CH 100V 18A TO252 |
|
TSM4N90CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 900V 4A ITO220AB |
|
STU1HN60K3STMicroelectronics |
MOSFET N-CH 600V 1.2A IPAK |