







MOSFET N-CH 24V 60A DPAK
IDC CBL - HHKC40H/AE40G/HHKC40H
DIODE SCHOTTKY 40V 100MW TSSLP-2
BCD TO SEVEN SEGMENT DECODER/DRI
| 类型 | 描述 |
|---|---|
| 系列: | STripFET™ II |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 24 V |
| 电流 - 连续漏极 (id) @ 25°c: | 60A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 5V, 10V |
| rds on (max) @ id, vgs: | 4.8mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 1.8V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 84 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3940 pF @ 15 V |
| 场效应管特征: | - |
| 功耗(最大值): | 100W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
NTD4804N-35GRochester Electronics |
MOSFET N-CH 30V 14.5A/124A IPAK |
|
|
STP80N10F7STMicroelectronics |
MOSFET N-CH 100V 80A TO220 |
|
|
HUFA76413D3SRochester Electronics |
MOSFET N-CH 60V 20A TO252AA |
|
|
UPA2751GR-E1-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NIF9N05CLT3G-SYRochester Electronics |
2.6 A, 52 V, N-CHANNEL, LOGIC LE |
|
|
EPC2020EPC |
GANFET N-CH 60V 90A DIE |
|
|
IPZ60R099C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 22A TO247-4 |
|
|
STW69N65M5-4STMicroelectronics |
MOSFET N-CH 650V 58A TO247-4L |
|
|
TPH6R30ANL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 66A/45A 8SOP |
|
|
FCH041N65EF-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 76A TO247 |
|
|
NTMFS5832NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 20A/111A 5DFN |
|
|
TK31E60X,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 30.8A TO220 |
|
|
IXFN170N25X3Wickmann / Littelfuse |
MOSFET N-CH 250V 170A SOT227B |