English
简体中文
MOSFET N-CH 500V 60A TO268
RECTIFIER DIODE, SCHOTTKY
XTAL OSC XO 25.0020MHZ HCMOS SMD
CONN MOD JACK 8P8C R/A UNSHLD
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™, Polar3™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 60A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 100mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 96 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 6250 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1040W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-268 |
| 包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SQD50N06-09L_GE3Vishay / Siliconix |
MOSFET N-CH 60V 50A TO252 |
|
STP34N65M5STMicroelectronics |
MOSFET N-CH 650V 28A TO220 |
|
BSS87H6327FTSA1IR (Infineon Technologies) |
MOSFET N-CH 240V 260MA SOT89-4 |
|
RZF013P01TLROHM Semiconductor |
MOSFET P-CH 12V 1.3A TUMT3 |
|
AUIRFS3607Rochester Electronics |
MOSFET N-CH 75V 80A D2PAK |
|
NTMFS4708NT1GRochester Electronics |
MOSFET N-CH 30V 7.8A 5DFN |
|
SQJ431AEP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 200V 9.4A PPAK SO-8 |
|
IXTH62N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 62A TO247 |
|
IXTH30N50L2Wickmann / Littelfuse |
MOSFET N-CH 500V 30A TO247 |
|
MIC94052YC6-TRRoving Networks / Microchip Technology |
MOSFET P-CH 6V 2A SC70-6 |
|
MCU60N04-TPMicro Commercial Components (MCC) |
MOSFET N-CH 40V 60A DPAK |
|
NTE2399NTE Electronics, Inc. |
MOSFET N-CHANNEL 1KV 3.1A TO220 |
|
APT10078SLLGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 14A D3PAK |