







 
                            AUTOMOTIVE POWER MOSFET
 
                            IC DRAM 512MBIT PARALLEL 60FBGA
 
                            FUSE BLOK BLT DWN 32V 500A CHASS
 
                            HAND CRIMPING TOOL FOR TERMINALS
| 类型 | 描述 | 
|---|---|
| 系列: | HEXFET® | 
| 包裹: | Bulk | 
| 零件状态: | Active | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 40 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 160A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 4.3V, 10V | 
| rds on (max) @ id, vgs: | 4mOhm @ 95A, 10V | 
| vgs(th) (最大值) @ id: | 3V @ 250µA | 
| 栅极电荷 (qg) (max) @ vgs: | 140 nC @ 5 V | 
| vgs (最大值): | ±20V | 
| 输入电容 (ciss) (max) @ vds: | 6.6 pF @ 25 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 3.8W (Ta), 200W (Tc) | 
| 工作温度: | -55°C ~ 175°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | D-PAK (TO-252AA) | 
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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