English
简体中文
MOSFET 2P-CH 30V 2.34A 8SOIC
SENSOR OPT 560NM AMBIENT 6SMD
BRD MNT PRESSURE SENSORS
IC IDIC 1KBIT R/W SAWN WAFER
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.34A |
| rds on (max) @ id, vgs: | 85mOhm @ 3.05A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 25nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 750pF @ 24V |
| 功率 - 最大值: | 730mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF7331TRPBFRochester Electronics |
7A, 20V, N CHANNEL, MOSFET |
|
PMDPB55XP,115Nexperia |
MOSFET 2P-CH 20V 3.4A 6HUSON |
|
BSO303PRochester Electronics |
P-CHANNEL POWER MOSFET |
|
FDMC007N30DSanyo Semiconductor/ON Semiconductor |
MOSFET 2 N-CHANNEL 30V 46A 8MLP |
|
DMN601VKQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 0.305A SOT563 |
|
SIZ300DT-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 11A POWERPAIR |
|
NDS9953ARochester Electronics |
P-CHANNEL POWER MOSFET |
|
CSD87501LTexas Instruments |
MOSFET 2N-CH 30V 10PICOSTAR |
|
SQS966ENW-T1_GE3Vishay / Siliconix |
MOSFET N-CHAN 60V |
|
RFD20N03SM9AR4770Rochester Electronics |
20A, 30V, 0.025 OHM, N-CHANNEL |
|
NX3008PBKV,115Nexperia |
MOSFET 2P-CH 30V 220MA SOT666 |
|
ZXMN2A04DN8TAZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 5.9A 8-SOIC |
|
SI4559ADY-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 60V 5.3A 8-SOIC |