English
简体中文
MEMS OSC XO 7.3728MHZ H/LV-CMOS
MEMS OSC XO 13.5600MHZ CMOS SMD
DIODE ZENER 6.2V 1W DO41
XTAL OSC TCXO 133.3300MHZ LVPECL
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/115 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 6.2 V |
| 宽容: | ±2% |
| 功率 - 最大值: | 1 W |
| 阻抗（最大）（zzt）: | 2 Ohms |
| 电流 - 反向泄漏@ vr: | 3 µA @ 3 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -65°C ~ 175°C |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-41 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTE5286ANTE Electronics, Inc. |
DIODE ZENER 105V 50W DO5 |
|
BZD27C82PWHTSC (Taiwan Semiconductor) |
DIODE ZENER 82V 1W SOD123W |
|
JAN1N4489USRoving Networks / Microchip Technology |
DIODE ZENER 100V 1.5W D5A |
|
BZD27C160PHMQGTSC (Taiwan Semiconductor) |
DIODE ZENER 162V 1W SUB SMA |
|
NTE5060ANTE Electronics, Inc. |
DIODE ZENER 200V 500 MV DO35 |
|
JAN1N4112CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 18V DO213AA |
|
MMSZ5226C-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.3V 500MW SOD123 |
|
BZM55B6V2-TR3Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.2V 500MW MICROMELF |
|
SMBJ5940BE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 43V 2W SMBJ |
|
BZD27C200PHMHGTSC (Taiwan Semiconductor) |
DIODE ZENER 200V 1W SUB SMA |
|
JAN1N4481USRoving Networks / Microchip Technology |
DIODE ZENER 47V 1.5W D5A |
|
BZV85-C16,113Nexperia |
DIODE ZENER 16V 1W DO41 |
|
SMAZ5939B-M3/5AVishay General Semiconductor – Diodes Division |
DIODE ZENER 39V 500MW DO214AC |