English
简体中文
MEMS OSC XO 26.0000MHZ LVCMOS LV
DIODE ZENER 16V 500MW DO35
CONN BRD STACK .100" 45POS
SENSOR 75PSIS 9/16 UNF 4-20 MA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/437 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 16 V |
| 宽容: | ±2% |
| 功率 - 最大值: | 500 mW |
| 阻抗（最大）（zzt）: | 100 Ohms |
| 电流 - 反向泄漏@ vr: | 10 nA @ 14.4 V |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
| 工作温度: | -65°C ~ 175°C |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AH, DO-35, Axial |
| 供应商设备包: | DO-35 (DO-204AH) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TZX24C-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 24V 500MW DO35 |
|
BZG03B220-HM3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 220V 1.25W DO214AC |
|
BZT52H-B11,115Nexperia |
DIODE ZENER 11V 375MW SOD123F |
|
KDZVTR6.8BROHM Semiconductor |
DIODE ZENER 6.8V 1W PMDU |
|
TZMC3V9-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 500MW SOD80 |
|
JAN1N967CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 18V 500MW DO213AA |
|
BZT52B33-G RHGTSC (Taiwan Semiconductor) |
DIODE ZENER 33V 410MW SOD123 |
|
1PGSMB5940 R5GTSC (Taiwan Semiconductor) |
DIODE ZENER 43V 3W DO214AA |
|
BZX84C3V6-TPMicro Commercial Components (MCC) |
DIODE ZENER 3.6V 350MW SOT23 |
|
DZ2S030M0LPanasonic |
DIODE ZENER 3V 150MW SSMINI2 |
|
JAN1N4954CUSRoving Networks / Microchip Technology |
DIODE ZENER 6.8V 5W D5B |
|
BZT52B9V1-F2-0000HF |
ZENER DIODE 9.1V 0.5W SOD-123 |
|
CDLL3017BRoving Networks / Microchip Technology |
DIODE ZENER 7.5V 1W DO213AB |