







DIODE SCHOTTKY 600V 4A TO220-F2
IC BATT PROT LI-ION 1CELL SNT-6A
FUSE CONTACT
CONN SPLICE 4AL TO 8CU AWG CRIMP
| 类型 | 描述 |
|---|---|
| 系列: | Z-Rec® |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Silicon Carbide Schottky |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io): | 4A (DC) |
| 电压 - 正向 (vf) (max) @ if: | 1.7 V @ 2 A |
| 速度: | No Recovery Time > 500mA (Io) |
| 反向恢复时间 (trr): | 0 ns |
| 电流 - 反向泄漏@ vr: | 50 µA @ 600 V |
| 电容@vr, f: | 120pF @ 0V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | TO-220-2 Full Pack, Isolated Tab |
| 供应商设备包: | TO-220-F2 |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
F1827D400Sensata Technologies – Crydom |
DIODE GEN PURP 400V 25A MODULE |
|
|
LS4148DComponents |
DIODE GEN PURP 75V 150MA SOD80C |
|
|
MUR460FFGRochester Electronics |
RECTIFIER DIODE, 4A, 600V, DO-20 |
|
|
VS-1EFU06-M3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO219AB |
|
|
VS-5EWH06FNTR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 5A DPAK |
|
|
VFT5200-E3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 5A 200V ITO-220AB |
|
|
S4G V7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 4A DO214AB |
|
|
STPS1170AFSTMicroelectronics |
DIODE SCHOTTKY 170V 1A SMAFLAT |
|
|
1N6480HE3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO213AB |
|
|
RGP02-17E-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.7KV 500MA DO204 |
|
|
JAN1N4148-1Roving Networks / Microchip Technology |
DIODE GEN PURP 75V 200MA DO35 |
|
|
SS16L RUGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 1A SUB SMA |
|
|
RS2B-M3/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1.5A DO214AA |