







DIODE STD D12.77X6.6Z 300V 35A
B853 5.75X3 BLK/RED/WHT 2-SIDE 1
DIODE ZENER 3.6V 1W DO216
IC RF TXRX+MCU 802.15.4 48VFQFN
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Box |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 300 V |
| 电流 - 平均整流 (io): | 35A |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 35 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 1.5 µs |
| 电流 - 反向泄漏@ vr: | 100 µA @ 300 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | DO-208AA |
| 供应商设备包: | DO-208 |
| 工作温度 - 结: | -50°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
VS-150KSR30Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 150A B42 |
|
|
1N5819-E3/73Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 1A DO204AL |
|
|
NTS1245MFST3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 45V 12A 5DFN |
|
|
1N4002-E3/53Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
|
|
NTE635NTE Electronics, Inc. |
R-SI 400V 2A ULTRA FAST |
|
|
IDH05SG60CXKSA2IR (Infineon Technologies) |
DIODE SCHOTTKY 600V 5A TO220-2 |
|
|
HS1J R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO214AC |
|
|
CDBER40Comchip Technology |
DIODE SCHOTTKY 40V 200MA 0503 |
|
|
D350SH45TXPSA1IR (Infineon Technologies) |
HIGH POWER THYR / DIO |
|
|
SS5P9-M3/86AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 90V 5A TO277A |
|
|
BAT54LP-7Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 30V 200MA 2DFN |
|
|
VS-E5TX1512-M3Vishay General Semiconductor – Diodes Division |
15A, 1200V, "X" SERIES FRED PT I |
|
|
PMEG045T150EPDAZRochester Electronics |
PMEG045T150EPD - 45 V, 15 A LOW |