







MOSFET N-CH 500V 21A TO220AB
DIODE GEN PURP 50V 1A SUB SMA
CMC 33MH 300MA 2LN TH
CONN BACKSHELL 15POS 90DEG SHLD
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 50 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 1 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 1.8 µs |
| 电流 - 反向泄漏@ vr: | 5 µA @ 50 V |
| 电容@vr, f: | 9pF @ 4V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | DO-219AB |
| 供应商设备包: | Sub SMA |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
1N645Solid State Inc. |
DIODE 4 AMP 225V DO35 |
|
|
ES1DHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO214AC |
|
|
ES1PDHM3/85AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO220AA |
|
|
SE10FJHM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO219AB |
|
|
HSS104-ERochester Electronics |
RECTIFIER DIODE, 0.11A |
|
|
RB541VM-40TE-17ROHM Semiconductor |
RB541VM-40 IS STANDARD SCHOTTKY |
|
|
V3FL45HM3/IVishay General Semiconductor – Diodes Division |
3A,45V,SMF,TRENCH SKY RECT. |
|
|
DURF1060Wickmann / Littelfuse |
DIODE GEN PURP 600V 10A ITO220AC |
|
|
1N5821-E3/54Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 3A DO201AD |
|
|
ES1GHM2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A DO214AC |
|
|
VS-35APF12LHM3Vishay General Semiconductor – Diodes Division |
DIODES - TO-247-E3 |
|
|
MBRM120LT1Rochester Electronics |
RECTIFIER DIODE |
|
|
S15JCHR7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 15A DO214AB |