







DIODE AVALANCHE 600V 2.4A TO277A
IC AMP CLASS AB STER 1.4W 20SSOP
CIRCUIT BREAKER MAG-HYDR LEVER
CONN BARRIER STRP 18CIRC 0.325"
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, eSMP® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Avalanche |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io): | 2.4A |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 4 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 1.8 µs |
| 电流 - 反向泄漏@ vr: | 10 µA @ 600 V |
| 电容@vr, f: | 60pF @ 4V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | TO-277, 3-PowerDFN |
| 供应商设备包: | TO-277A (SMPC) |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
VS-2EQH02HM3/HVishay General Semiconductor – Diodes Division |
ULTRAFAST RECTIFIER 2A DO-219AD |
|
|
NTE507NTE Electronics, Inc. |
DIODE GEN PURP 50V 1A DO41 |
|
|
DZ1070N22KHPSA3IR (Infineon Technologies) |
DIODE GEN PURP 2.2KV 1100A MOD |
|
|
EAL1JDiotec Semiconductor |
DIODE SFR DO-213AA 600V 1A |
|
|
SL03-M-18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V DO219-M |
|
|
BYS10-35-M3/TR3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 1.5A DO214AC |
|
|
RGP30J-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3A DO201AD |
|
|
JANTXV1N645-1Roving Networks / Microchip Technology |
DIODE GEN PURP 225V 400MA DO35 |
|
|
1N5406GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 3A DO201AD |
|
|
UH2DHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
|
|
V15PN50-M3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 15A TO277A |
|
|
CD214A-FS1GJ.W. Miller / Bourns |
DIO RECT |
|
|
SK2040YD2RDiotec Semiconductor |
SCHOTTKY D2PAK 40V 20A |