







 
                            MEMS OSC XO 33.3330MHZ H/LV-CMOS
 
                            RELAY TELECOM DPDT 2A 9VDC
 
                            TRANS NPN 80V 8A TO3
 
                            DIODE SBR X1-DFN1006-2
| 类型 | 描述 | 
|---|---|
| 系列: | TrenchSBR® | 
| 包裹: | Tape & Reel (TR) | 
| 零件状态: | Active | 
| 二极管型: | Super Barrier | 
| 电压 - 直流反向 (vr) (max): | 20 V | 
| 电流 - 平均整流 (io): | 500mA | 
| 电压 - 正向 (vf) (max) @ if: | 390 mV @ 500 mA | 
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) | 
| 反向恢复时间 (trr): | 6 ns | 
| 电流 - 反向泄漏@ vr: | 50 µA @ 20 V | 
| 电容@vr, f: | 14pF @ 20V, 1MHz | 
| 安装类型: | Surface Mount | 
| 包/箱: | 0402 (1006 Metric) | 
| 供应商设备包: | X1-DFN1006-2 | 
| 工作温度 - 结: | -65°C ~ 150°C | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | BAS20WT-TPMicro Commercial Components (MCC) | DIODE GEN PURP 150V 200MA SOT323 | 
|   | 1N5408G A0GTSC (Taiwan Semiconductor) | DIODE GEN PURP 1KV 3A DO201AD | 
|   | VS-6EVX06-M3/IVishay General Semiconductor – Diodes Division | DIODE GEN PURPOSE 600V SLIMDPAK | 
|   | CMPD914 TR PBFREECentral Semiconductor | DIODE GEN PURP 75V 250MA SOT23 | 
|   | GF1AHE3/67AVishay General Semiconductor – Diodes Division | DIODE GEN PURP 50V 1A DO214BA | 
|   | FSV560Sanyo Semiconductor/ON Semiconductor | DIODE SCHOTTKY 60V 5A TO277-3 | 
|   | SD103AW-G3-08Vishay General Semiconductor – Diodes Division | DIODE SCHOTTKY 350MA 40V SOD123 | 
|   | JANTX1N3614Roving Networks / Microchip Technology | DIODE GEN PURP 800V 1A AXIAL | 
|   | NRVTS10120MFST3GSanyo Semiconductor/ON Semiconductor | DIODE SCHOTTKY 120V 10A 5DFN | 
|   | SS54B-F1-0000HF | DIODE SCHOTTKY 40V 5A DO214AA | 
|   | SF2003PTHC0GTSC (Taiwan Semiconductor) | DIODE GEN PURP 150V 20A TO247AD | 
|   | SE15PGHM3/84AVishay General Semiconductor – Diodes Division | DIODE GEN PURP 400V 1.5A DO220AA | 
|   | DNA30E2200PZ-TUBWickmann / Littelfuse | POWER DIODE DISCRETES-RECTIFIER |