







TVS DIODE 170V 275V SOD123
MEMS OSC XO 74.175824MHZ LVDS
FLEX CABLE - AFG11G/AF11/AFE11T
IC MEMORY NOR
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔(典型值): | 170V |
| 电压 - 击穿(分钟): | 189V |
| 电压 - 钳位(最大值)@ ipp: | 275V |
| 电流 - 峰值脉冲 (10/1000µs): | 730mA |
| 功率-峰值脉冲: | 200W |
| 电源线保护: | No |
| 应用: | Automotive |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | SOD-123F |
| 供应商设备包: | SOD-123 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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8.0SMDJ64CAWickmann / Littelfuse |
TVS DIODE 8KW 64V 5%BI DO-214AB |
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MXLSMBJ28AE3Roving Networks / Microchip Technology |
TVS DIODE 28V 45.4V DO214AA |
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MSMBJ70ARoving Networks / Microchip Technology |
TVS DIODE 70V 113V DO214AA |
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MASMBJSAC5.0Roving Networks / Microchip Technology |
TVS DIODE 5V 10V DO214AA |
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1.5SMC51CA-M3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 43.6V 70.1V DO214AB |
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VESD03A1B-HD1-GS08Vishay General Semiconductor – Diodes Division |
TVS DIODE 3.3V 9V LLP1006-2L |
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15KPA30CAWickmann / Littelfuse |
TVS DIODE 30V 50.7V P600 |
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SMBJ43CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AA |
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SMBJ120CD-M3/IVishay General Semiconductor – Diodes Division |
TVS DIODE 120V 190V DO214AA |
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MSMBG100ARoving Networks / Microchip Technology |
TVS DIODE 100V 162V DO215AA |
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SMBJ48CA-M3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 48V 77.4V DO214AA |
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MA1.5KE7.5CARoving Networks / Microchip Technology |
TVS DIODE 6.4V 11.3V DO204AR |
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GSOT05-HE3-08Vishay General Semiconductor – Diodes Division |
TVS DIODE 5V 16V SOT23 |